دیتاشیت NVD3055L170T4G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD3055L170
|
| حجم فایل |
150.218
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
-
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NVD3055L170T4G
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Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
-
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
-
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
-
-
Package:
TO-252
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
60V
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Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
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Drive Voltage (Max Rds On, Min Rds On):
5V
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Rds On (Max) @ Id, Vgs:
170mOhm @ 4.5A, 5V
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Vgs(th) (Max) @ Id:
2V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
10nC @ 5V
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Vgs (Max):
±15V
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Input Capacitance (Ciss) (Max) @ Vds:
275pF @ 25V
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FET Feature:
-
-
Power Dissipation (Max):
1.5W (Ta), 28.5W (Tj)
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Operating Temperature:
-55°C ~ 175°C (TJ)
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Mounting Type:
Surface Mount
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Supplier Device Package:
DPAK
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Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Part Number:
NVD305
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detail:
N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK
