NVD3055L170T4G

NVD3055L170T4G

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مشخصات فنی:
Manufacturer onsemi
Package TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet NTD3055L170
Description N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK

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مشخصات NVD3055L170T4G

  • RoHS true
  • Type -
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVD3055L170T4G
  • Power Dissipation (Pd) -
  • Total Gate Charge (Qg@Vgs) -
  • Drain Source Voltage (Vdss) -
  • Input Capacitance (Ciss@Vds) -
  • Continuous Drain Current (Id) -
  • Gate Threshold Voltage (Vgs(th)@Id) -
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) -
  • Package TO-252
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60V
  • Current - Continuous Drain (Id) @ 25°C 9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 5V
  • Rds On (Max) @ Id, Vgs 170mOhm @ 4.5A, 5V
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 10nC @ 5V
  • Vgs (Max) ±15V
  • Input Capacitance (Ciss) (Max) @ Vds 275pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 1.5W (Ta), 28.5W (Tj)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package DPAK
  • Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number NVD305
  • detail N-Channel 60V 9A (Ta) 1.5W (Ta), 28.5W (Tj) Surface Mount DPAK

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