MJ802G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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MJ802G
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حجم فایل
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75.998
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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4
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi MJ802G
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Transistor Type:
NPN
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Operating Temperature:
-65°C~+200°C@(Tj)
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Collector Current (Ic):
30A
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Power Dissipation (Pd):
200W
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Transition Frequency (fT):
2MHz
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DC Current Gain (hFE@Ic,Vce):
25@7.5A,2V
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Collector Cut-Off Current (Icbo):
1mA
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Collector-Emitter Breakdown Voltage (Vceo):
90V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
800mV@7.5A,750mA
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Package:
TO-204
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
30A
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Voltage - Collector Emitter Breakdown (Max):
90V
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Vce Saturation (Max) @ Ib, Ic:
800mV @ 750mA, 7.5A
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Current - Collector Cutoff (Max):
1mA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 7.5A, 2V
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Power - Max:
200W
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Frequency - Transition:
2MHz
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Mounting Type:
Chassis Mount
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Package / Case:
TO-204AA, TO-3
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Supplier Device Package:
TO-3
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Base Part Number:
MJ80
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detail:
Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Chassis Mount TO-3
