MJ802G
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| Manufacturer | onsemi |
| Package | TO-204AA, TO-3 |
| Datasheet | MJ802 |
| Description | Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Chassis Mount TO-3 |
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مشخصات MJ802G
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi MJ802G
- Transistor Type NPN
- Operating Temperature -65°C~+200°C@(Tj)
- Collector Current (Ic) 30A
- Power Dissipation (Pd) 200W
- Transition Frequency (fT) 2MHz
- DC Current Gain (hFE@Ic,Vce) 25@7.5A,2V
- Collector Cut-Off Current (Icbo) 1mA
- Collector-Emitter Breakdown Voltage (Vceo) 90V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 800mV@7.5A,750mA
- Package TO-204
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Obsolete
- Current - Collector (Ic) (Max) 30A
- Voltage - Collector Emitter Breakdown (Max) 90V
- Vce Saturation (Max) @ Ib, Ic 800mV @ 750mA, 7.5A
- Current - Collector Cutoff (Max) 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 7.5A, 2V
- Power - Max 200W
- Frequency - Transition 2MHz
- Mounting Type Chassis Mount
- Package / Case TO-204AA, TO-3
- Supplier Device Package TO-3
- Base Part Number MJ80
- detail Bipolar (BJT) Transistor NPN 90V 30A 2MHz 200W Chassis Mount TO-3
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