دیتاشیت FGH50T65SQD-F155
مشخصات دیتاشیت
| نام دیتاشیت |
FGH50T65SQD
|
| حجم فایل |
554.461
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGH50T65SQD-F155
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
100A
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Power Dissipation (Pd):
268W
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Turn?on Delay Time (Td(on)):
22ns
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Input Capacitance (Cies@Vce):
-
-
Turn?on Switching Loss (Eon):
0.18mJ
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Total Gate Charge (Qg@Ic,Vge):
99nC
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Turn?off Delay Time (Td(off)):
105ns
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Pulsed Collector Current (Icm):
200A
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Turn?off Switching Loss (Eoff):
0.045mJ
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Diode Reverse Recovery Time (Trr):
31ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.1V@15V,50A
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Package:
TO-247
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector (Ic) (Max):
100A
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Current - Collector Pulsed (Icm):
200A
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Vce(on) (Max) @ Vge, Ic:
2.1V @ 15V, 50A
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Power - Max:
268W
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Switching Energy:
180µJ (on), 45µJ (off)
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Input Type:
Standard
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Gate Charge:
99nC
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Td (on/off) @ 25°C:
22ns/105ns
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Test Condition:
400V, 12.5A, 4.7Ohm, 15V
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Reverse Recovery Time (trr):
31ns
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Mounting Type:
Through Hole
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Package / Case:
TO-247-3
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Supplier Device Package:
TO-247-3
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Base Part Number:
FGH50
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detail:
IGBT Trench Field Stop 650V 100A 268W Through Hole TO-247-3
