FGH50T65SQD-F155
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | FGH50T65SQD |
| Description | IGBT Trench Field Stop 650V 100A 268W Through Hole TO-247-3 |
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مشخصات FGH50T65SQD-F155
- RoHS true
- Type Trench Field Stop
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi FGH50T65SQD-F155
- Operating Temperature -55°C~+175°C@(Tj)
- Collector Current (Ic) 100A
- Power Dissipation (Pd) 268W
- Turn?on Delay Time (Td(on)) 22ns
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) 0.18mJ
- Total Gate Charge (Qg@Ic,Vge) 99nC
- Turn?off Delay Time (Td(off)) 105ns
- Pulsed Collector Current (Icm) 200A
- Turn?off Switching Loss (Eoff) 0.045mJ
- Diode Reverse Recovery Time (Trr) 31ns
- Collector-Emitter Breakdown Voltage (Vces) 650V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.1V@15V,50A
- Package TO-247
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- IGBT Type Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) 650V
- Current - Collector (Ic) (Max) 100A
- Current - Collector Pulsed (Icm) 200A
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
- Power - Max 268W
- Switching Energy 180µJ (on), 45µJ (off)
- Input Type Standard
- Gate Charge 99nC
- Td (on/off) @ 25°C 22ns/105ns
- Test Condition 400V, 12.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr) 31ns
- Mounting Type Through Hole
- Package / Case TO-247-3
- Supplier Device Package TO-247-3
- Base Part Number FGH50
- detail IGBT Trench Field Stop 650V 100A 268W Through Hole TO-247-3
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