NVMYS3D3N06CLTWG دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NVMYS3D3N06CLTWG
|
|
حجم فایل
|
92.656
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
7
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NVMYS3D3N06CLTWG
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
3.9W;100W
-
Total Gate Charge (Qg@Vgs):
40.7nC@10V
-
Input Capacitance (Ciss@Vds):
2880pF@25V
-
Continuous Drain Current (Id):
26A;133A
-
Gate Threshold Voltage (Vgs(th)@Id):
2V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
3mΩ@50A,10V
-
Package:
LFPAK-4
-
Manufacturer:
onsemi
-
Series:
Automotive, AEC-Q101
-
Packaging:
Cut Tape (CT)
-
Part Status:
Active
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
26A (Ta), 133A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
-
Rds On (Max) @ Id, Vgs:
3mOhm @ 50A, 10V
-
Vgs(th) (Max) @ Id:
2V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
40.7nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
2880pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
3.9W (Ta), 100W (Tc)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
4-LFPAK
-
Package / Case:
SOT-1023, 4-LFPAK
-
Base Part Number:
NVMYS3
-
detail:
N-Channel 60V 26A (Ta), 133A (Tc) 3.9W (Ta), 100W (Tc) Surface Mount 4-LFPAK
