NVMYS3D3N06CLTWG
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| Manufacturer | onsemi |
| Package | SOT-1023, 4-LFPAK |
| Datasheet | NVMYS3D3N06CL |
| Description | N-Channel 60V 26A (Ta), 133A (Tc) 3.9W (Ta), 100W (Tc) Surface Mount 4-LFPAK |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NVMYS3D3N06CLTWG
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 3.9W;100W
- Total Gate Charge (Qg@Vgs) 40.7nC@10V
- Input Capacitance (Ciss@Vds) 2880pF@25V
- Continuous Drain Current (Id) 26A;133A
- Gate Threshold Voltage (Vgs(th)@Id) 2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 3mΩ@50A,10V
- Package LFPAK-4
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Cut Tape (CT)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 26A (Ta), 133A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 40.7nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 2880pF @ 25V
- FET Feature -
- Power Dissipation (Max) 3.9W (Ta), 100W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package 4-LFPAK
- Package / Case SOT-1023, 4-LFPAK
- Base Part Number NVMYS3
- detail N-Channel 60V 26A (Ta), 133A (Tc) 3.9W (Ta), 100W (Tc) Surface Mount 4-LFPAK
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