DTC115EET1G دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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DTC115EET1G
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حجم فایل
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87.009
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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11
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Digital Transistors
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Datasheet:
onsemi MUN2236T1G
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Transistor Type:
1 NPN - Pre Biased
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
338mW
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DC Current Gain (hFE@Ic,Vce):
80@5mA,10V
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Collector Cut-Off Current (Icbo):
500nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@10mA,300uA
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Package:
SC-59
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tape & Reel (TR)
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
100mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Resistor - Base (R1):
100 kOhms
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Resistor - Emitter Base (R2):
100 kOhms
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DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 5mA, 10V
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Vce Saturation (Max) @ Ib, Ic:
250mV @ 300µA, 10mA
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Current - Collector Cutoff (Max):
500nA
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Power - Max:
338mW
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SC-59
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Base Part Number:
MUN22
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detail:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 338mW Surface Mount SC-59
