NSVMMUN2236LT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | MUN(2,5)236, DTC115xx |
| Description | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet onsemi NSVMMUN2236LT1G
- Transistor Type 1 NPN - Pre Biased
- Collector Current (Ic) 100mA
- Power Dissipation (Pd) 246mW
- DC Current Gain (hFE@Ic,Vce) 80@5mA,10V
- Collector Cut-Off Current (Icbo) 500nA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@10mA,300uA
- Package SOT-23-3
- Manufacturer onsemi
- Series Automotive, AEC-Q101
- Packaging Tape & Reel (TR)
- Part Status Active
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Resistor - Base (R1) 100 kOhms
- Resistor - Emitter Base (R2) 100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max) 500nA
- Power - Max 246mW
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23-3 (TO-236)
- Base Part Number NSVMMUN2
- detail Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 246mW Surface Mount SOT-23-3 (TO-236)
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