SMMBT5089LT1G دیتاشیت

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دانلود دیتاشیت SMMBT5089LT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi SMMBT5089LT1G
Transistor Type: NPN
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 50mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 50MHz
DC Current Gain (hFE@Ic,Vce): 400@100uA,5V
Collector Cut-Off Current (Icbo): 50nA
Collector-Emitter Breakdown Voltage (Vceo): 25V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@1mA,10mA
Package: SOT-23-3
Manufacturer: onsemi
Series: -
Packaging: Cut Tape (CT)
Part Status: Obsolete
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 400 @ 100µA, 5V
Power - Max: 350mW
Frequency - Transition: 50MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Base Part Number: MMBT5089
detail: Bipolar (BJT) Transistor NPN 25V 100mA 50MHz 350mW Surface Mount SOT-23