SMMBT5089LT1G
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| Manufacturer | onsemi |
| Package | TO-236-3, SC-59, SOT-23-3 |
| Datasheet | 2N5088/89, MMBT5088/89 |
| Description | Bipolar (BJT) Transistor NPN 25V 100mA 50MHz 350mW Surface Mount SOT-23 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi SMMBT5089LT1G
- Transistor Type NPN
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 50mA
- Power Dissipation (Pd) 300mW
- Transition Frequency (fT) 50MHz
- DC Current Gain (hFE@Ic,Vce) 400@100uA,5V
- Collector Cut-Off Current (Icbo) 50nA
- Collector-Emitter Breakdown Voltage (Vceo) 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 500mV@1mA,10mA
- Package SOT-23-3
- Manufacturer onsemi
- Series -
- Packaging Cut Tape (CT)
- Part Status Obsolete
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 25V
- Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max) 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 100µA, 5V
- Power - Max 350mW
- Frequency - Transition 50MHz
- Mounting Type Surface Mount
- Package / Case TO-236-3, SC-59, SOT-23-3
- Supplier Device Package SOT-23
- Base Part Number MMBT5089
- detail Bipolar (BJT) Transistor NPN 25V 100mA 50MHz 350mW Surface Mount SOT-23
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