NSM80100MT1G دیتاشیت

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مشاهده دیتاشیت NSM80100MT1G	دانلود دیتاشیت

RoHS: true
Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
Datasheet: onsemi NSM80100MT1G
Transistor Type: PNP
Operating Temperature: -55°C~+150°C@(Tj)
Collector Current (Ic): 500mA
Power Dissipation (Pd): 270mW
Transition Frequency (fT): 150MHz
DC Current Gain (hFE@Ic,Vce): 120@10mA,1V
Collector Cut-Off Current (Icbo): 100nA
Collector-Emitter Breakdown Voltage (Vceo): 80V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@100mA,10mA
Package: SC-74-6
Manufacturer: onsemi
Series: -
Packaging: Tape & Reel (TR)
Part Status: Active
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 80V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 1V
Power - Max: 270mW
Frequency - Transition: 150MHz
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SC-74
Base Part Number: NSM801
detail: Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 270mW Surface Mount SC-74