NSM80100MT1G

NSM80100MT1G

80V 270mW 120@10mA,1V 500mA PNP SC-74-6 Bipolar Transistors - BJT ROHS

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مشخصات فنی:
Manufacturer onsemi
Package SC-74, SOT-457
Datasheet NSM80100MT1G
Description Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 270mW Surface Mount SC-74

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مشخصات

  • RoHS true
  • Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet onsemi NSM80100MT1G
  • Transistor Type PNP
  • Operating Temperature -55°C~+150°C@(Tj)
  • Collector Current (Ic) 500mA
  • Power Dissipation (Pd) 270mW
  • Transition Frequency (fT) 150MHz
  • DC Current Gain (hFE@Ic,Vce) 120@10mA,1V
  • Collector Cut-Off Current (Icbo) 100nA
  • Collector-Emitter Breakdown Voltage (Vceo) 80V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 250mV@100mA,10mA
  • Package SC-74-6
  • Manufacturer onsemi
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Current - Collector (Ic) (Max) 500mA
  • Voltage - Collector Emitter Breakdown (Max) 80V
  • Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max) 100nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 10mA, 1V
  • Power - Max 270mW
  • Frequency - Transition 150MHz
  • Mounting Type Surface Mount
  • Package / Case SC-74, SOT-457
  • Supplier Device Package SC-74
  • Base Part Number NSM801
  • detail Bipolar (BJT) Transistor PNP 80V 500mA 150MHz 270mW Surface Mount SC-74

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