MJD31 (NPN), MJD32 (PNP) دیتاشیت

MJD31 (NPN), MJD32 (PNP)

مشخصات دیتاشیت

نام دیتاشیت MJD31 (NPN), MJD32 (PNP)
حجم فایل 152.264 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

دانلود دیتاشیت MJD31 (NPN), MJD32 (PNP)

دانلود دیتاشیت

سایر مستندات

MJD32T4G 11 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi NJVMJD31T4G
  • Transistor Type: NPN
  • Operating Temperature: -65°C~+150°C@(Tj)
  • Collector Current (Ic): 3A
  • Power Dissipation (Pd): 1.56W
  • Transition Frequency (fT): 3MHz
  • DC Current Gain (hFE@Ic,Vce): 10@3A,4V
  • Collector Cut-Off Current (Icbo): 50uA
  • Collector-Emitter Breakdown Voltage (Vceo): 40V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.2V@3A,375mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
  • Power - Max: 1.56W
  • Frequency - Transition: 3MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
  • Base Part Number: NJVMJD31
  • detail: Bipolar (BJT) Transistor NPN 40V 3A 3MHz 1.56W Surface Mount DPAK

محصولات مشابه