دیتاشیت 2SB1205T-TL-E

2SB1205

مشخصات دیتاشیت

نام دیتاشیت 2SB1205
حجم فایل 371.226 کیلوبایت
نوع فایل pdf
تعداد صفحات 9

دانلود دیتاشیت 2SB1205

2SB1205 Datasheet

مشخصات

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi 2SB1205T-TL-E
  • Transistor Type: PNP
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 10W
  • Transition Frequency (fT): 320MHz
  • DC Current Gain (hFE@Ic,Vce): 200@500mA,2V
  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 20V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 250mV@3A,60mA
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 60mA, 3A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 320MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: 2-TP-FA
  • Base Part Number: 2SB1205
  • detail: Bipolar (BJT) Transistor PNP 20V 5A 320MHz 1W Surface Mount 2-TP-FA