NVTFS6H888NWFTAG دیتاشیت

مشخصات دیتاشیت

مشاهده دیتاشیت NVTFS6H888NWFTAG	دانلود دیتاشیت

RoHS: true
Type: N Channel
Category: Triode/MOS Tube/Transistor/MOSFETs
Datasheet: onsemi NVTFS6H888NWFTAG
Operating Temperature: -55°C~+175°C@(Tj)
Power Dissipation (Pd): 2.9W;18W
Total Gate Charge (Qg@Vgs): 4.7nC@10V
Drain Source Voltage (Vdss): 80V
Input Capacitance (Ciss@Vds): 220pF@40V
Continuous Drain Current (Id): 4.7A;null
Gate Threshold Voltage (Vgs(th)@Id): 4V@15uA
Reverse Transfer Capacitance (Crss@Vds): 3pF@40V
Drain Source On Resistance (RDS(on)@Vgs,Id): 45.7mΩ@10V,5A
Package: DFN-8(3x3)
Manufacturer: onsemi
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 55mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 40V
FET Feature: -
Power Dissipation (Max): 2.9W (Ta), 18W (Tc)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN
Base Part Number: NVTFS6
detail: N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)