NVTFS6H888NWFTAG

NVTFS6H888NWFTAG

NVTFS6H888NWFTAG

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مشخصات فنی:
Manufacturer onsemi
Package 8-PowerWDFN
Datasheet NVTFS6H888N
Description N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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مشخصات

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi NVTFS6H888NWFTAG
  • Operating Temperature -55°C~+175°C@(Tj)
  • Power Dissipation (Pd) 2.9W;18W
  • Total Gate Charge (Qg@Vgs) 4.7nC@10V
  • Drain Source Voltage (Vdss) 80V
  • Input Capacitance (Ciss@Vds) 220pF@40V
  • Continuous Drain Current (Id) 4.7A;null
  • Gate Threshold Voltage (Vgs(th)@Id) 4V@15uA
  • Reverse Transfer Capacitance (Crss@Vds) 3pF@40V
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 45.7mΩ@10V,5A
  • Package DFN-8(3x3)
  • Manufacturer onsemi
  • Series Automotive, AEC-Q101
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 80V
  • Current - Continuous Drain (Id) @ 25°C 4.7A (Ta), 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 55mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id 4V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs 4.7nC @ 10V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 220pF @ 40V
  • FET Feature -
  • Power Dissipation (Max) 2.9W (Ta), 18W (Tc)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-WDFN (3.3x3.3)
  • Package / Case 8-PowerWDFN
  • Base Part Number NVTFS6
  • detail N-Channel 80V 4.7A (Ta), 12A (Tc) 2.9W (Ta), 18W (Tc) Surface Mount 8-WDFN (3.3x3.3)

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