دیتاشیت NTD4979N-35G
مشخصات دیتاشیت
| نام دیتاشیت |
NTD4979N-35G
|
| حجم فایل |
96.968
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi NTD4979N-35G
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
26.3W
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Total Gate Charge (Qg@Vgs):
9nC@4.5V
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Drain Source Voltage (Vdss):
30V
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Input Capacitance (Ciss@Vds):
837pF@15V
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Continuous Drain Current (Id):
41A
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Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
180pF@15V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
6.9mΩ@10V,30A
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Package:
IPAK
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
30V
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Current - Continuous Drain (Id) @ 25°C:
9.4A (Ta), 41A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
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Rds On (Max) @ Id, Vgs:
9mOhm @ 30A, 10V
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Vgs(th) (Max) @ Id:
2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
16.5nC @ 10V
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Vgs (Max):
±20V
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Input Capacitance (Ciss) (Max) @ Vds:
837pF @ 15V
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FET Feature:
-
-
Power Dissipation (Max):
1.38W (Ta), 26.3W (Tc)
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Mounting Type:
Through Hole
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Supplier Device Package:
I-PAK
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Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
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Base Part Number:
NTD49
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detail:
N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
