NTD4979N-35G
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| Manufacturer | onsemi |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | NTD4979N-35G |
| Description | N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK |
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مشخصات NTD4979N-35G
- RoHS true
- Type N Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTD4979N-35G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 26.3W
- Total Gate Charge (Qg@Vgs) 9nC@4.5V
- Drain Source Voltage (Vdss) 30V
- Input Capacitance (Ciss@Vds) 837pF@15V
- Continuous Drain Current (Id) 41A
- Gate Threshold Voltage (Vgs(th)@Id) 1.8V@250uA
- Reverse Transfer Capacitance (Crss@Vds) 180pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id) 6.9mΩ@10V,30A
- Package IPAK
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16.5nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 837pF @ 15V
- FET Feature -
- Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc)
- Mounting Type Through Hole
- Supplier Device Package I-PAK
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number NTD49
- detail N-Channel 30V 9.4A (Ta), 41A (Tc) 1.38W (Ta), 26.3W (Tc) Through Hole I-PAK
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