FJP5555TU دیتاشیت

FJP5555TU

مشخصات دیتاشیت

نام دیتاشیت FJP5555TU
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 7

دانلود دیتاشیت FJP5555TU

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سایر مستندات

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: onsemi FJP5555TU
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 75W
  • Transition Frequency (fT): -
  • DC Current Gain (hFE@Ic,Vce): 20@800mA,3V
  • Collector Cut-Off Current (Icbo): -
  • Collector-Emitter Breakdown Voltage (Vceo): 400V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.5V@3.5A,1A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Tube
  • Part Status: Active
  • Current - Collector (Ic) (Max): 5A
  • Voltage - Collector Emitter Breakdown (Max): 400V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1A, 3.5A
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 3V
  • Power - Max: 75W
  • Frequency - Transition: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
  • Base Part Number: FJP555
  • detail: Bipolar (BJT) Transistor NPN 400V 5A 75W Through Hole TO-220-3

محصولات مشابه