FJP5555TU
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | FJP5555 |
| Description | Bipolar (BJT) Transistor NPN 400V 5A 75W Through Hole TO-220-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi FJP5555TU
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 75W
- Transition Frequency (fT) -
- DC Current Gain (hFE@Ic,Vce) 20@800mA,3V
- Collector Cut-Off Current (Icbo) -
- Collector-Emitter Breakdown Voltage (Vceo) 400V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 1.5V@3.5A,1A
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 400V
- Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
- Current - Collector Cutoff (Max) -
- DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 800mA, 3V
- Power - Max 75W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number FJP555
- detail Bipolar (BJT) Transistor NPN 400V 5A 75W Through Hole TO-220-3
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