FQU1N80TU دیتاشیت

FQD1N80, FQU1N80

مشخصات دیتاشیت

نام دیتاشیت FQD1N80, FQU1N80
حجم فایل 1486.189 کیلوبایت
نوع فایل pdf
تعداد صفحات 11

مشاهده دیتاشیت FQD1N80, FQU1N80

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مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 2.5W;45W
  • Total Gate Charge (Qg@Vgs): 7.2nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 195pF@25V
  • Continuous Drain Current (Id): 1A
  • Gate Threshold Voltage (Vgs(th)@Id): 5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 20Ω@500mA,10V
  • Package: TO-251-3
  • Manufacturer: onsemi
  • Series: QFET®
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 195pF @ 25V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-PAK
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Base Part Number: FQU1
  • detail: N-Channel 800V 1A (Tc) 2.5W (Ta), 45W (Tc) Through Hole I-PAK

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