FCPF650N80Z دیتاشیت

FCPF650N80Z

مشخصات دیتاشیت

نام دیتاشیت FCPF650N80Z
حجم فایل 70.016 کیلوبایت
نوع فایل pdf
تعداد صفحات 10

مشاهده دیتاشیت FCPF650N80Z

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سایر مستندات

FCPF650N80Z 10 pages

مشخصات فنی

  • RoHS: true
  • Type: N Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi FCPF650N80Z
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Power Dissipation (Pd): 30.5W
  • Total Gate Charge (Qg@Vgs): 35nC@10V
  • Drain Source Voltage (Vdss): 800V
  • Input Capacitance (Ciss@Vds): 1565pF@100V
  • Continuous Drain Current (Id): 8A
  • Gate Threshold Voltage (Vgs(th)@Id): 4.5V@800uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 650mΩ@10V,4A
  • Package: TO-220
  • Manufacturer: onsemi
  • Series: SuperFET® II
  • Packaging: Tube
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 800µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1565pF @ 100V
  • FET Feature: -
  • Power Dissipation (Max): 30.5W (Tc)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
  • Base Part Number: FCPF650
  • detail: N-Channel 800V 8A (Tc) 30.5W (Tc) Through Hole TO-220F

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