دیتاشیت 2SD1060R-1E
مشخصات دیتاشیت
| نام دیتاشیت |
2SD1060
|
| حجم فایل |
197.42
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi 2SD1060R-1E
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
5A
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Power Dissipation (Pd):
30W
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Transition Frequency (fT):
30MHz
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DC Current Gain (hFE@Ic,Vce):
100@1A,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@3A,300mA
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Package:
TO-220
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tube
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Part Status:
Active
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Current - Collector (Ic) (Max):
5A
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
300mV @ 300mA, 3A
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Current - Collector Cutoff (Max):
100µA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 2V
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Power - Max:
1.75W
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Frequency - Transition:
30MHz
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Mounting Type:
Through Hole
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Package / Case:
TO-220-3
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Supplier Device Package:
TO-220-3
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Base Part Number:
2SD1060
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detail:
Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3
