2SD1060S-1E
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| Manufacturer | onsemi |
| Package | TO-220-3 |
| Datasheet | 2SD1060 |
| Description | Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3 |
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مشخصات 2SD1060S-1E
- RoHS true
- Category Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet onsemi 2SD1060S-1E
- Transistor Type NPN
- Operating Temperature +150°C@(Tj)
- Collector Current (Ic) 5A
- Power Dissipation (Pd) 1.75W
- Transition Frequency (fT) 30MHz
- DC Current Gain (hFE@Ic,Vce) 140@1A,2V
- Collector Cut-Off Current (Icbo) 100uA
- Collector-Emitter Breakdown Voltage (Vceo) 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib) 300mV@3A,300mA
- Package TO-220
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Active
- Current - Collector (Ic) (Max) 5A
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 300mA, 3A
- Current - Collector Cutoff (Max) 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 140 @ 1A, 2V
- Power - Max 1.75W
- Frequency - Transition 30MHz
- Mounting Type Through Hole
- Package / Case TO-220-3
- Supplier Device Package TO-220-3
- Base Part Number 2SD1060
- detail Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3
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