FCB260N65S3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FCB260N65S3
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حجم فایل
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65.365
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FCB260N65S3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
90W
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Total Gate Charge (Qg@Vgs):
24nC@10V
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
1010pF@400V
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Gate Threshold Voltage (Vgs(th)@Id):
4.5V@1.2mA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
260mΩ@6A,10V
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Package:
TO-263
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Manufacturer:
onsemi
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Series:
SuperFET® III
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Packaging:
Tape & Reel (TR)
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Part Status:
Active
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FET Type:
N-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
650V
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Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
260mOhm @ 6A, 10V
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Vgs(th) (Max) @ Id:
4.5V @ 1.2mA
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Gate Charge (Qg) (Max) @ Vgs:
24nC @ 10V
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Vgs (Max):
±30V
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Input Capacitance (Ciss) (Max) @ Vds:
1010pF @ 400V
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FET Feature:
-
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Power Dissipation (Max):
90W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FCB26
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detail:
N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
