FCB260N65S3
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | FCB260N65S3 |
| Description | N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263) |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FCB260N65S3
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 90W
- Total Gate Charge (Qg@Vgs) 24nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 1010pF@400V
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@1.2mA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 260mΩ@6A,10V
- Package TO-263
- Manufacturer onsemi
- Series SuperFET® III
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 260mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 1.2mA
- Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 1010pF @ 400V
- FET Feature -
- Power Dissipation (Max) 90W (Tc)
- Mounting Type Surface Mount
- Supplier Device Package D²PAK (TO-263)
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number FCB26
- detail N-Channel 650V 12A (Tc) 90W (Tc) Surface Mount D²PAK (TO-263)
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