دیتاشیت 2SD1060R-1EX
مشخصات دیتاشیت
| نام دیتاشیت |
2SD1060
|
| حجم فایل |
197.42
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Not For New Designs
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
5A
-
Voltage - Collector Emitter Breakdown (Max):
50V
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 300mA, 3A
-
Current - Collector Cutoff (Max):
100µA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 2V
-
Power - Max:
1.75W
-
Frequency - Transition:
30MHz
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-220-3
-
Supplier Device Package:
TO-220-3
-
Base Part Number:
2SD1060
-
detail:
Bipolar (BJT) Transistor NPN 50V 5A 30MHz 1.75W Through Hole TO-220-3
