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- دیتاشیت HGTP10N120BN
HGTP10N120BN دیتاشیت
مشخصات دیتاشیت
| نام دیتاشیت | HGTP10N120BN |
|---|---|
| حجم فایل | 70.016 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 10 |
دانلود دیتاشیت HGTP10N120BN |
دانلود دیتاشیت |
|---|
سایر مستندات
TO220B03 Pkg Drawing 1 pages
HGT(G,P)10N120BN, HGT1S10N120BNS 10 pages
مشخصات فنی
- RoHS: true
- Type: NPT
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: onsemi HGTP10N120BN
- Operating Temperature: 55°C~+150°C@(Tj)
- Collector Current (Ic): 35A
- Power Dissipation (Pd): 298W
- Turn?on Delay Time (Td(on)): 23ns
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 0.32mJ
- Total Gate Charge (Qg@Ic,Vge): 100nC
- Turn?off Delay Time (Td(off)): 165ns
- Pulsed Collector Current (Icm): 80A
- Turn?off Switching Loss (Eoff): 0.8mJ
- Collector-Emitter Breakdown Voltage (Vces): 1200V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 2.7V@15V,10A
- Package: TO-220
- Manufacturer: onsemi
- Series: -
- Packaging: Tube
- Part Status: Not For New Designs
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 35A
- Current - Collector Pulsed (Icm): 80A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
- Power - Max: 298W
- Switching Energy: 320µJ (on), 800µJ (off)
- Input Type: Standard
- Gate Charge: 100nC
- Td (on/off) @ 25°C: 23ns/165ns
- Test Condition: 960V, 10A, 10Ohm, 15V
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220-3
- Base Part Number: HGTP10N120
- detail: IGBT NPT 1200V 35A 298W Through Hole TO-220-3