HGTP10N120BN

HGTP10N120BN

HGTP10N120BN

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مشخصات فنی:
Manufacturer onsemi
Package TO-220-3
Datasheet HGT(G,P)10N120BN, HGT1S10N120BNS
Description IGBT NPT 1200V 35A 298W Through Hole TO-220-3

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مشخصات

  • RoHS true
  • Type NPT
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Datasheet onsemi HGTP10N120BN
  • Operating Temperature 55°C~+150°C@(Tj)
  • Collector Current (Ic) 35A
  • Power Dissipation (Pd) 298W
  • Turn?on Delay Time (Td(on)) 23ns
  • Input Capacitance (Cies@Vce) -
  • Turn?on Switching Loss (Eon) 0.32mJ
  • Total Gate Charge (Qg@Ic,Vge) 100nC
  • Turn?off Delay Time (Td(off)) 165ns
  • Pulsed Collector Current (Icm) 80A
  • Turn?off Switching Loss (Eoff) 0.8mJ
  • Collector-Emitter Breakdown Voltage (Vces) 1200V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2.7V@15V,10A
  • Package TO-220
  • Manufacturer onsemi
  • Series -
  • Packaging Tube
  • Part Status Not For New Designs
  • IGBT Type NPT
  • Voltage - Collector Emitter Breakdown (Max) 1200V
  • Current - Collector (Ic) (Max) 35A
  • Current - Collector Pulsed (Icm) 80A
  • Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
  • Power - Max 298W
  • Switching Energy 320µJ (on), 800µJ (off)
  • Input Type Standard
  • Gate Charge 100nC
  • Td (on/off) @ 25°C 23ns/165ns
  • Test Condition 960V, 10A, 10Ohm, 15V
  • Mounting Type Through Hole
  • Package / Case TO-220-3
  • Supplier Device Package TO-220-3
  • Base Part Number HGTP10N120
  • detail IGBT NPT 1200V 35A 298W Through Hole TO-220-3

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