FGL60N100BNTDTU دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FGL60N100BNTDTU
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حجم فایل
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47.973
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi FGL60N100BNTDTU
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
60A
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Power Dissipation (Pd):
180W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
-
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Pulsed Collector Current (Icm):
120A
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Diode Reverse Recovery Time (Trr):
1.2us
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Collector-Emitter Breakdown Voltage (Vces):
1000V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
TO-264-3
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Tube
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Part Status:
Not For New Designs
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IGBT Type:
NPT and Trench
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Voltage - Collector Emitter Breakdown (Max):
1000V
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Current - Collector (Ic) (Max):
60A
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Current - Collector Pulsed (Icm):
120A
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Vce(on) (Max) @ Vge, Ic:
2.9V @ 15V, 60A
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Power - Max:
180W
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Switching Energy:
-
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Input Type:
Standard
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Gate Charge:
275nC
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Td (on/off) @ 25°C:
140ns/630ns
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Test Condition:
600V, 60A, 51Ohm, 15V
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Reverse Recovery Time (trr):
1.2µs
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Mounting Type:
Through Hole
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Package / Case:
TO-264-3, TO-264AA
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Supplier Device Package:
TO-264-3
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Base Part Number:
FGL6
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detail:
IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
