FGL60N100BNTDTU
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| Manufacturer | onsemi |
| Package | TO-264-3, TO-264AA |
| Datasheet | FGL60N100BNTD |
| Description | IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3 |
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مشخصات
- RoHS true
- Type -
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi FGL60N100BNTDTU
- Operating Temperature -55°C~+150°C@(Tj)
- Collector Current (Ic) 60A
- Power Dissipation (Pd) 180W
- Input Capacitance (Cies@Vce) -
- Turn?on Switching Loss (Eon) -
- Pulsed Collector Current (Icm) 120A
- Diode Reverse Recovery Time (Trr) 1.2us
- Collector-Emitter Breakdown Voltage (Vces) 1000V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) -
- Package TO-264-3
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Not For New Designs
- IGBT Type NPT and Trench
- Voltage - Collector Emitter Breakdown (Max) 1000V
- Current - Collector (Ic) (Max) 60A
- Current - Collector Pulsed (Icm) 120A
- Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 60A
- Power - Max 180W
- Switching Energy -
- Input Type Standard
- Gate Charge 275nC
- Td (on/off) @ 25°C 140ns/630ns
- Test Condition 600V, 60A, 51Ohm, 15V
- Reverse Recovery Time (trr) 1.2µs
- Mounting Type Through Hole
- Package / Case TO-264-3, TO-264AA
- Supplier Device Package TO-264-3
- Base Part Number FGL6
- detail IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3
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