دیتاشیت FCHD040N65S3-F155
مشخصات دیتاشیت
| نام دیتاشیت | FCHD040N65S3 |
|---|---|
| حجم فایل | 330.251 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 9 |
دانلود دیتاشیت FCHD040N65S3 |
FCHD040N65S3 Datasheet |
|---|
مشخصات
- RoHS: true
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FCHD040N65S3-F155
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 417W
- Total Gate Charge (Qg@Vgs): 136nC@10V
- Drain Source Voltage (Vdss): 650V
- Input Capacitance (Ciss@Vds): 4740pF@400V
- Continuous Drain Current (Id): 65A
- Gate Threshold Voltage (Vgs(th)@Id): 4.5V@1.7mA
- Reverse Transfer Capacitance (Crss@Vds): -
- Drain Source On Resistance (RDS(on)@Vgs,Id): 40mΩ@32.5A,10V
- Package: TO-247
- Manufacturer: onsemi
- Series: SuperFET® III
- Packaging: Tube
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 40mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 136nC @ 10V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 4740pF @ 400V
- FET Feature: -
- Power Dissipation (Max): 417W (Tc)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-3
- Base Part Number: FCHD04
- detail: N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247