FCHD040N65S3-F155

FCHD040N65S3-F155

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مشخصات فنی:
Manufacturer onsemi
Package TO-247-3
Datasheet FCHD040N65S3
Description N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247

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مشخصات FCHD040N65S3-F155

  • RoHS true
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi FCHD040N65S3-F155
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 417W
  • Total Gate Charge (Qg@Vgs) 136nC@10V
  • Drain Source Voltage (Vdss) 650V
  • Input Capacitance (Ciss@Vds) 4740pF@400V
  • Continuous Drain Current (Id) 65A
  • Gate Threshold Voltage (Vgs(th)@Id) 4.5V@1.7mA
  • Reverse Transfer Capacitance (Crss@Vds) -
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 40mΩ@32.5A,10V
  • Package TO-247
  • Manufacturer onsemi
  • Series SuperFET® III
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 650V
  • Current - Continuous Drain (Id) @ 25°C 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V
  • Vgs (Max) ±30V
  • Input Capacitance (Ciss) (Max) @ Vds 4740pF @ 400V
  • FET Feature -
  • Power Dissipation (Max) 417W (Tc)
  • Mounting Type Through Hole
  • Supplier Device Package TO-247
  • Package / Case TO-247-3
  • Base Part Number FCHD04
  • detail N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247

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