FCHD040N65S3-F155
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| Manufacturer | onsemi |
| Package | TO-247-3 |
| Datasheet | FCHD040N65S3 |
| Description | N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247 |
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مشخصات FCHD040N65S3-F155
- RoHS true
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi FCHD040N65S3-F155
- Operating Temperature -55°C~+150°C@(Tj)
- Power Dissipation (Pd) 417W
- Total Gate Charge (Qg@Vgs) 136nC@10V
- Drain Source Voltage (Vdss) 650V
- Input Capacitance (Ciss@Vds) 4740pF@400V
- Continuous Drain Current (Id) 65A
- Gate Threshold Voltage (Vgs(th)@Id) 4.5V@1.7mA
- Reverse Transfer Capacitance (Crss@Vds) -
- Drain Source On Resistance (RDS(on)@Vgs,Id) 40mΩ@32.5A,10V
- Package TO-247
- Manufacturer onsemi
- Series SuperFET® III
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650V
- Current - Continuous Drain (Id) @ 25°C 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs 136nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 4740pF @ 400V
- FET Feature -
- Power Dissipation (Max) 417W (Tc)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Package / Case TO-247-3
- Base Part Number FCHD04
- detail N-Channel 650V 65A (Tc) 417W (Tc) Through Hole TO-247
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