BD677AS 数据手册
数据手册规格
|
数据手册名称
|
BD675(A),77(A),79(A),81
|
|
文件大小
|
83.495
千字节
|
|
文件类型
|
pdf
|
|
页数
|
4
|
技术规格
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Bulk
-
Part Status:
Obsolete
-
Transistor Type:
NPN - Darlington
-
Current - Collector (Ic) (Max):
4A
-
Voltage - Collector Emitter Breakdown (Max):
60V
-
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
-
Current - Collector Cutoff (Max):
500µA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
-
Power - Max:
40W
-
Frequency - Transition:
-
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-225AA, TO-126-3
-
Supplier Device Package:
TO-225AA
-
Base Part Number:
BD677
-
detail:
Bipolar (BJT) Transistor NPN - Darlington 60V 4A 40W Through Hole TO-225AA