MJ11030G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MJ11028,29,30,32,33
|
|
حجم فایل
|
118.905
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
4
|
مشخصات فنی
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tray
-
Part Status:
Obsolete
-
Transistor Type:
NPN - Darlington
-
Current - Collector (Ic) (Max):
50A
-
Voltage - Collector Emitter Breakdown (Max):
90V
-
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 500mA, 50A
-
Current - Collector Cutoff (Max):
2mA
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 25A, 5V
-
Power - Max:
300W
-
Frequency - Transition:
-
-
Operating Temperature:
-55°C ~ 200°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-204AE
-
Supplier Device Package:
TO-3
-
Base Part Number:
MJ110
-
detail:
Bipolar (BJT) Transistor NPN - Darlington 90V 50A 300W Through Hole TO-3