MJ11028G
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| Manufacturer | onsemi |
| Package | TO-204AE |
| Datasheet | MJ11028,29,30,32,33 |
| Description | Bipolar (BJT) Transistor NPN - Darlington 60V 50A 300W Through Hole TO-3 |
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مشخصات
- RoHS true
- Category Triode/MOS Tube/Transistor/Darlington Transistors
- Datasheet onsemi MJ11028G
- Transistor Type NPN
- Operating Temperature -55°C~+200°C@(Tj)
- Collector Current (Ic) 50A
- Power Dissipation (Pd) 300W
- Transition frequency (fT) -
- DC current gain (hFE@Vce,Ic) 1000@5V,25A
- Collector-emitter voltage (Vceo) 60V
- Collector cut-off current (Icbo@Vcb) 2mA
- Collector-emitter saturation voltage (VCE(sat)@Ic,Ib) 3.5V@50A,500mA
- Package TO-204
- Manufacturer onsemi
- Series -
- Packaging Tray
- Part Status Active
- Current - Collector (Ic) (Max) 50A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 3.5V @ 500mA, 50A
- Current - Collector Cutoff (Max) 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 25A, 5V
- Power - Max 300W
- Frequency - Transition -
- Mounting Type Through Hole
- Package / Case TO-204AE
- Supplier Device Package TO-3
- Base Part Number MJ110
- detail Bipolar (BJT) Transistor NPN - Darlington 60V 50A 300W Through Hole TO-3
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