دیتاشیت 2SC536NG-NPA-AT
مشخصات دیتاشیت
| نام دیتاشیت |
2SC536NG-NPA-AT
|
| حجم فایل |
274.035
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات فنی
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tape & Reel (TR)
-
Part Status:
Obsolete
-
Transistor Type:
NPN
-
Current - Collector (Ic) (Max):
150mA
-
Voltage - Collector Emitter Breakdown (Max):
50V
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
-
Current - Collector Cutoff (Max):
100nA (ICBO)
-
DC Current Gain (hFE) (Min) @ Ic, Vce:
280 @ 1mA, 6V
-
Power - Max:
500mW
-
Frequency - Transition:
200MHz
-
Operating Temperature:
150°C (TJ)
-
Mounting Type:
Through Hole
-
Package / Case:
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
-
Supplier Device Package:
TO-226AA
-
Base Part Number:
2SC536
-
detail:
Bipolar (BJT) Transistor NPN 50V 150mA 200MHz 500mW Through Hole TO-226AA
