2SC536NG-NPA-AT
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| Manufacturer | ON Semiconductor |
| Package | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Datasheet | 2SA608N/2SC536N |
| Description | Bipolar (BJT) Transistor NPN 50V 150mA 200MHz 500mW Through Hole TO-226AA |
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مشخصات 2SC536NG-NPA-AT
- Manufacturer ON Semiconductor
- Series -
- Packaging Tape & Reel (TR)
- Part Status Obsolete
- Transistor Type NPN
- Current - Collector (Ic) (Max) 150mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 1mA, 6V
- Power - Max 500mW
- Frequency - Transition 200MHz
- Operating Temperature 150°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Supplier Device Package TO-226AA
- Base Part Number 2SC536
- detail Bipolar (BJT) Transistor NPN 50V 150mA 200MHz 500mW Through Hole TO-226AA
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