دیتاشیت NDDP010N25AZ-1H
مشخصات دیتاشیت
| نام دیتاشیت |
NDDP010N25AZ
|
| حجم فایل |
392.557
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
6
|
مشخصات
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Tube
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
250V
-
Current - Continuous Drain (Id) @ 25°C:
10A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
420mOhm @ 5A, 10V
-
Vgs(th) (Max) @ Id:
4.5V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
16nC @ 10V
-
Vgs (Max):
±30V
-
Input Capacitance (Ciss) (Max) @ Vds:
980pF @ 20V
-
FET Feature:
-
-
Power Dissipation (Max):
1W (Ta), 52W (Tc)
-
Operating Temperature:
-55°C ~ 150°C (TJ)
-
Mounting Type:
Through Hole
-
Supplier Device Package:
IPAK/TP
-
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
-
Base Part Number:
NDDP0
-
detail:
N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP
