NDDP010N25AZ-1H
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| Manufacturer | ON Semiconductor |
| Package | TO-251-3 Short Leads, IPak, TO-251AA |
| Datasheet | NDDP010N25AZ |
| Description | N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP |
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مشخصات NDDP010N25AZ-1H
- Manufacturer ON Semiconductor
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 420mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Vgs (Max) ±30V
- Input Capacitance (Ciss) (Max) @ Vds 980pF @ 20V
- FET Feature -
- Power Dissipation (Max) 1W (Ta), 52W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package IPAK/TP
- Package / Case TO-251-3 Short Leads, IPak, TO-251AA
- Base Part Number NDDP0
- detail N-Channel 250V 10A (Ta) 1W (Ta), 52W (Tc) Through Hole IPAK/TP
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