NGTD17T65F2WP دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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NGTD17T65F2WP
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حجم فایل
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79.176
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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3
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مشخصات فنی
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RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi NGTD17T65F2WP
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Operating Temperature:
55°C~+175°C@(Tj)
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Turn?on Switching Loss (Eon):
-
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Pulsed Collector Current (Icm):
160A
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2V@15V,40A
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Package:
SMD
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Active
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IGBT Type:
Trench Field Stop
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Voltage - Collector Emitter Breakdown (Max):
650V
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Current - Collector Pulsed (Icm):
160A
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Vce(on) (Max) @ Vge, Ic:
2V @ 15V, 40A
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Switching Energy:
-
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Input Type:
Standard
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Td (on/off) @ 25°C:
-
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Test Condition:
-
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Mounting Type:
Surface Mount
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Package / Case:
Die
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Supplier Device Package:
Die
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Base Part Number:
NGTD17
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detail:
IGBT Trench Field Stop 650V Surface Mount Die
