NGTD17T65F2WP
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| Manufacturer | onsemi |
| Package | Die |
| Datasheet | NGTD17T65F2 |
| Description | IGBT Trench Field Stop 650V Surface Mount Die |
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تغییرات قیمت
مشخصات
- RoHS true
- Type Trench Field Stop
- Category Triode/MOS Tube/Transistor/IGBTs
- Datasheet onsemi NGTD17T65F2WP
- Operating Temperature 55°C~+175°C@(Tj)
- Turn?on Switching Loss (Eon) -
- Pulsed Collector Current (Icm) 160A
- Collector-Emitter Breakdown Voltage (Vces) 650V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic) 2V@15V,40A
- Package SMD
- Manufacturer onsemi
- Series -
- Packaging Bulk
- Part Status Active
- IGBT Type Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max) 650V
- Current - Collector Pulsed (Icm) 160A
- Vce(on) (Max) @ Vge, Ic 2V @ 15V, 40A
- Switching Energy -
- Input Type Standard
- Td (on/off) @ 25°C -
- Test Condition -
- Mounting Type Surface Mount
- Package / Case Die
- Supplier Device Package Die
- Base Part Number NGTD17
- detail IGBT Trench Field Stop 650V Surface Mount Die
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