NGTD20T120F2WP دیتاشیت

NGTD20T120F2WP

مشخصات دیتاشیت

نام دیتاشیت NGTD20T120F2WP
حجم فایل 79.47 کیلوبایت
نوع فایل pdf
تعداد صفحات 3

مشاهده دیتاشیت NGTD20T120F2WP

دانلود دیتاشیت

سایر مستندات

NGTD20T120F2 3 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: onsemi NGTD20T120F2WP
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Collector Current (Ic): -
  • Power Dissipation (Pd): -
  • Turn?on Delay Time (Td(on)): -
  • Input Capacitance (Cies@Vce): 4.42nF@20V
  • Turn?on Switching Loss (Eon): -
  • Diode Forward Voltage (Vf@If): -
  • Total Gate Charge (Qg@Ic,Vge): -
  • Turn?off Delay Time (Td(off)): -
  • Pulsed Collector Current (Icm): 100A
  • Turn?off Switching Loss (Eoff): -
  • Diode Reverse Recovery Time (Trr): -
  • Collector Cut-Off Current (Ices@Vce): 400uA@1.2kV
  • Collector-Emitter Breakdown Voltage (Vces): 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.5V@400uA
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 2V@20A,15V
  • Package: SMD
  • Manufacturer: onsemi
  • Series: -
  • Packaging: Bulk
  • Part Status: Active
  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Switching Energy: -
  • Input Type: Standard
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
  • Base Part Number: NGTD20
  • detail: IGBT Trench Field Stop 1200V Surface Mount Die

محصولات مشابه