NGTD20T120F2WP

1.2kV Trench Field Stop SMD IGBTs ROHS

در 0 فروشگاه

قیمت هنوز مشخص نشده است

این محصول در حال حاضر فروشنده ای ندارد!

مشخصات فنی:
Manufacturer onsemi
Package Die
Datasheet NGTD20T120F2
Description IGBT Trench Field Stop 1200V Surface Mount Die

sellers NGTD20T120F2WP

فروشگاهی یافت نشد

تغییرات قیمت

مشخصات

  • RoHS true
  • Type Trench Field Stop
  • Category Triode/MOS Tube/Transistor/IGBTs
  • Datasheet onsemi NGTD20T120F2WP
  • Operating Temperature -55°C~+175°C@(Tj)
  • Collector Current (Ic) -
  • Power Dissipation (Pd) -
  • Turn?on Delay Time (Td(on)) -
  • Input Capacitance (Cies@Vce) 4.42nF@20V
  • Turn?on Switching Loss (Eon) -
  • Diode Forward Voltage (Vf@If) -
  • Total Gate Charge (Qg@Ic,Vge) -
  • Turn?off Delay Time (Td(off)) -
  • Pulsed Collector Current (Icm) 100A
  • Turn?off Switching Loss (Eoff) -
  • Diode Reverse Recovery Time (Trr) -
  • Collector Cut-Off Current (Ices@Vce) 400uA@1.2kV
  • Collector-Emitter Breakdown Voltage (Vces) 1.2kV
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic) 5.5V@400uA
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge) 2V@20A,15V
  • Package SMD
  • Manufacturer onsemi
  • Series -
  • Packaging Bulk
  • Part Status Active
  • IGBT Type Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max) 1200V
  • Current - Collector Pulsed (Icm) 100A
  • Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 20A
  • Switching Energy -
  • Input Type Standard
  • Td (on/off) @ 25°C -
  • Test Condition -
  • Mounting Type Surface Mount
  • Package / Case Die
  • Supplier Device Package Die
  • Base Part Number NGTD20
  • detail IGBT Trench Field Stop 1200V Surface Mount Die

فروشنده ها

فروشگاهی یافت نشد