NVB25P06T4G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NTB25P06
|
|
حجم فایل
|
120.377
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
Manufacturer:
ON Semiconductor
-
Series:
-
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
P-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
60V
-
Current - Continuous Drain (Id) @ 25°C:
27.5A (Ta)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
82mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 250µA
-
Gate Charge (Qg) (Max) @ Vgs:
50nC @ 10V
-
Vgs (Max):
±15V
-
Input Capacitance (Ciss) (Max) @ Vds:
1680pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
120W (Tj)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D2PAK
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
Base Part Number:
NVB25P
-
detail:
P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK
