NTB25P06T4G
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| Manufacturer | onsemi |
| Package | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Datasheet | NTB25P06 |
| Description | P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK |
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مشخصات
- RoHS true
- Type P Channel
- Category Triode/MOS Tube/Transistor/MOSFETs
- Datasheet onsemi NTB25P06T4G
- Operating Temperature -55°C~+175°C@(Tj)
- Power Dissipation (Pd) 120W
- Total Gate Charge (Qg@Vgs) 50nC@10V
- Drain Source Voltage (Vdss) 60V
- Input Capacitance (Ciss@Vds) 1680pF@25V
- Continuous Drain Current (Id) 27.5A
- Gate Threshold Voltage (Vgs(th)@Id) 4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id) 82mΩ@10V,25A
- Package TO-263
- Manufacturer onsemi
- Series -
- Packaging Tube
- Part Status Obsolete
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 27.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 82mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 50nC @ 10V
- Vgs (Max) ±15V
- Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 25V
- FET Feature -
- Power Dissipation (Max) 120W (Tj)
- Mounting Type Surface Mount
- Supplier Device Package D2PAK
- Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number NTB25
- detail P-Channel 60V 27.5A (Ta) 120W (Tj) Surface Mount D2PAK
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