دیتاشیت 2N7002ET1G
مشخصات دیتاشیت
| نام دیتاشیت | 2N7002E Datasheet |
|---|---|
| حجم فایل | 135.009 کیلوبایت |
| نوع فایل | |
| تعداد صفحات | 5 |
دانلود دیتاشیت 2N7002E Datasheet |
2N7002E Datasheet Datasheet |
|---|
مشخصات
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi 2N7002ET1G
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 300mW
- Total Gate Charge (Qg@Vgs): 0.81nC@5V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 26.7pF@25V
- Continuous Drain Current (Id): 260mA
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 2.5Ω@10V,240mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 240mA, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.81nC @ 5V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 26.7pF @ 25V
- FET Feature: -
- Power Dissipation (Max): 300mW (Tj)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: 2N7002
- detail: N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)
