2N7002ET1G

2N7002ET1G

در 0 فروشگاه قیمت هنوز مشخص نشده است

این محصول در حال حاضر فروشنده ای ندارد!

مشخصات فنی:
Manufacturer onsemi
Package TO-236-3, SC-59, SOT-23-3
Datasheet 2N7002E Datasheet
Description N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

فروشنده های 2N7002ET1G

فروشگاهی یافت نشد

تغییرات قیمت

مشخصات 2N7002ET1G

  • RoHS true
  • Type N Channel
  • Category Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet onsemi 2N7002ET1G
  • Operating Temperature -55°C~+150°C@(Tj)
  • Power Dissipation (Pd) 300mW
  • Total Gate Charge (Qg@Vgs) 0.81nC@5V
  • Drain Source Voltage (Vdss) 60V
  • Input Capacitance (Ciss@Vds) 26.7pF@25V
  • Continuous Drain Current (Id) 260mA
  • Gate Threshold Voltage (Vgs(th)@Id) 2.5V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id) 2.5Ω@10V,240mA
  • Package SOT-23(TO-236)
  • Manufacturer onsemi
  • Series -
  • Packaging Cut Tape (CT)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60V
  • Current - Continuous Drain (Id) @ 25°C 260mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Rds On (Max) @ Id, Vgs 2.5Ohm @ 240mA, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 0.81nC @ 5V
  • Vgs (Max) ±20V
  • Input Capacitance (Ciss) (Max) @ Vds 26.7pF @ 25V
  • FET Feature -
  • Power Dissipation (Max) 300mW (Tj)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-23-3 (TO-236)
  • Package / Case TO-236-3, SC-59, SOT-23-3
  • Base Part Number 2N7002
  • detail N-Channel 60V 260mA (Ta) 300mW (Tj) Surface Mount SOT-23-3 (TO-236)

فروشنده های 2N7002ET1G

فروشگاهی یافت نشد